Common-Mode Noise Current Simulation and Measurement on a Gate Driver for SiC MOSFET Half-Bridge Modules

Fast switching transitions of the SiC MOSFET power semiconductor devices, can cause abundance of issues due to injected common-mode (CM) noise current through gate driver, possibly preventing converter successful operation. Therefore, this paper presents a detailed methodology of simulation and new...

Full description

Saved in:
Bibliographic Details
Main Authors: Tanaka, T., Burgos, R., Cvetkovic, I., Mocevic, S., Wang, J., Boroyevich, D.
Format: Conference Proceeding
Language:English
Subjects:
Buck converter
Common-mode noise
Current measurement
Gate driver
Gate drivers
Isolators
MOSFET
Semiconductor device measurement
SiC MOSFET
Silicon carbide
Switches
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Fast switching transitions of the SiC MOSFET power semiconductor devices, can cause abundance of issues due to injected common-mode (CM) noise current through gate driver, possibly preventing converter successful operation. Therefore, this paper presents a detailed methodology of simulation and new measurement method of CM noise current on a gate driver. For simulation, detailed consideration of circuit parasitics (inductances, resistances and capacitances) is included and analyzed. Considering measurement, small high-precision chip resistors are utilized to measure the CM noise current. The results achieved by simulation and measurement are in agreement. This method is applied to design a novel gate driver for 1.7 kV SiC MOSFET half-bridge module having "on-board communication" between top and bottom devices. By comparing different options, simple communication by a digital isolator is deemed the best. As this paper illustrates, proposed method of evaluating and measuring the noise is useful to design new gate drivers.
ISSN:2150-6086
DOI:10.1109/ECCE-Asia49820.2021.9479137