Effects of facet head-on light ion-irradiation in InGaP/GaAs/InGaAs quantum well lasers

Summary form only given. We present results on the reduction in free-carrier absorption for n-InGaP material with He/sup +/ ion irradiation. Threshold doses for isolation above 1/spl times/10/sup 13/ cm/sup -2/ at 100 keV are obtained. Transparency through 1 /spl mu/m of n-InGaP material is examined...

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Bibliographic Details
Main Authors: Pataro, L.L., Nascimento, G.C., Danilov, I., Frateschi, N.C.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Gallium arsenide
Indium gallium arsenide
Laser modes
Mirrors
Power generation
Power lasers
Quantum dot lasers
Quantum well lasers
Temperature
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Summary:Summary form only given. We present results on the reduction in free-carrier absorption for n-InGaP material with He/sup +/ ion irradiation. Threshold doses for isolation above 1/spl times/10/sup 13/ cm/sup -2/ at 100 keV are obtained. Transparency through 1 /spl mu/m of n-InGaP material is examined by photoluminescence. We find a twofold increase in quantum well emission photoluminescence intensity after irradiation. Also, damage to the quantum well is investigated as a function of irradiation energy and quantum well depth. Finally, we investigate irradiation effects on the field intensity and temperature distribution at the facets. Evidence of enhancement in cladding layer transparency to the laser emission is observed on the irradiated facet. Therefore, less facet heating and degradation is expected with the head-on irradiation treatment.
DOI:10.1109/CLEO.2001.948070