Design of a High-Density Integrated Power Electronics Building Block (iPEBB) Based on 1.7 kV SiC MOSFETs on a Common Substrate

This paper presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the therm...

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Bibliographic Details
Main Authors: Rajagopal, Narayanan, DiMarino, Christina, Burgos, Rolando, Cvetkovic, Igor, Shawky, Mina
Format: Conference Proceeding
Language:English
Subjects:
Inductance
integration
Metallization
MOSFET
ODBC
packaging
PEBB
Power electronics
Silicon carbide
Switches
Thermal resistance
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Summary:This paper presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the thermal, electrical, and mechanical performance, and contributes to the weight and reliability of the iPEBB. State-of-the-art organic direct bonded copper (ODBC) substrates are evaluated in this work. Multi-domain simulations are used to design the integrated SiC bridges to achieve a power loop inductance of 3.5 nH, a maximum temperature of 175 °C, and a weight of 16 kg. A half-bridge module prototype is fabricated and tested to provide insight into the substrate functionality and to aid in the refinement of the iPEBB concept.
ISSN:2470-6647
DOI:10.1109/APEC42165.2021.9487167