Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions

We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycr...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2021-09, Vol.11 (5), p.1149-1157
Main Authors: Wehmeier, Nadine, Kiefer, Fabian, Brendemuhl, Till, Mettner, Larissa, Wolter, Sascha J., Haase, Felix, Peibst, Robby, Holthausen, Michael, Mispelkamp, Dominik, Mader, Christoph, Daeschlein, Christian, Wunnicke, Odo, Kajari-Schroder, Sarah
Format: Article
Language:English
Subjects:
Amorphous silicon
Annealing
Emitters
Ink jet printing
Inkjet printing
interdigitated back contact (IBC) structure
Junctions
liquid silicon (LiSi) ink
Oligomers
passivating contacts
Photovoltaic cells
Polysilicon
Silicon
Silicon oxides
silicon solar cells
Solar cells
Thickness measurement
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Summary:We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO²) are formed and the saturation current densities as low as 5 fA/cm 2 are achieved for n + -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO 2 solar cell processing. In particular, for POLO 2 -IBC cells, a lean process flow is facilitated.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2021.3094131