A CMOS Rectifier Employing Body Biasing Scheme for RF Energy Harvesting

This paper presents a CMOS rectifier for RF energy harvesting. The structure of the proposed design is based on a modified cross-coupled architecture. It employs an adaptive body biasing technique to lower the transistor threshold voltage (V th ) when the PMOS is ON. This would increase the conducti...

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Bibliographic Details
Published in:IEEE access 2021, Vol.9, p.105606-105611
Main Authors: Al-Absi, Munir A., Alkhalifa, Ibrahim M., Mohammed, Adel A., Al-Khulaifi, Abdulaziz A.
Format: Article
Language:English
Subjects:
body biasing
CMOS
CMOS rectifier
Design modifications
Energy conversion efficiency
Energy harvesting
power conversion efficiency (PCE)
Radio frequency
Rectifiers
RF energy harvesting
Schottky diodes
Threshold voltage
Transistors
Wireless sensor networks
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Summary:This paper presents a CMOS rectifier for RF energy harvesting. The structure of the proposed design is based on a modified cross-coupled architecture. It employs an adaptive body biasing technique to lower the transistor threshold voltage (V th ) when the PMOS is ON. This would increase the conduction current. Moreover, this technique increases V th when the PMOS is OFF. This would minimize the current flowing in the reverse bias condition. The proposed design is simulated using 0.18~\mu \text{m} TSMC CMOS technology under various loading conditions and an input frequency of 953 MHz. A peak power conversion efficiency (PCE) of 78.2% is achieved at an input power of −27.5 dBm and a 100 \text{k}\Omega load.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2021.3099826