Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

The influence of passivation on the edge effects (EEs) present in the capacitance-voltage ( {C} - {V} ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers i...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4296-4301
Main Authors: Orfao, B., Vasallo, B. G., Perez, S., Mateos, J., Moro-Melgar, D., Zaknoune, M., Gonzalez, T.
Format: Article
Language:English
Subjects:
Capacitance
Dielectric passivation
Dielectric strength
Dielectrics
Edge effect
edge effects (EEs)
Electric potential
Electron density
Electronics
Engineering Sciences
Frequency multipliers
Gallium nitrides
Geometry
Monte Carlo (MC)
Optimization
Passivation
Passivity
permittivity
Schottky barrier diodes (SBDs)
Schottky barriers
Schottky diodes
Surface charge
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of passivation on the edge effects (EEs) present in the capacitance-voltage ( {C} - {V} ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the {C} - {V} curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presence of surface charges at the semiconductor/dielectric interface, which is considered by means of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivation material leads to more pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3097703