Driving spectral resolution to the noise limit in semiconductor gamma detector arrays

Shape time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. Steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near to a single pixel. The build-up period is shorter...

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Bibliographic Details
Main Author: Lachish, U.
Format: Conference Proceeding
Language:English
Subjects:
Circuit noise
Electrons
Gamma ray detection
Gamma ray detectors
Noise shaping
Semiconductor device noise
Sensor arrays
Shape
Signal generators
Signal resolution
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Description
Summary:Shape time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. Steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near to a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape time response is adjusted to overlap with the fast buildup period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory.
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.2000.949893