RF Characteristics of Stacked Poly-Si Nanosheets Thin Film Transistors

Polycrystalline silicon thin-film transistors (poly-Si TFTs) with vertically stacked GAA nanosheet are fabricated. The DC and high frequency characteristics of GAA poly-Si nanosheet TFTs with single channel and stack double channel are investigated. Device with different nanosheet width ( W_{nw} ) a...

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Bibliographic Details
Main Authors: Hu, Hsin-Hui, Meng, Ching-Fan, Wang, Wei-Hsiang, Lu, Tsung-Han, Lee, Yao-Jen, Sung, Po-Jung, Chen, Kun-Ming
Format: Conference Proceeding
Language:English
Subjects:
Conferences
Gallium arsenide
Integrated circuits
Nanoscale devices
Performance evaluation
Silicon
Three-dimensional displays
Online Access:Request full text
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Summary:Polycrystalline silicon thin-film transistors (poly-Si TFTs) with vertically stacked GAA nanosheet are fabricated. The DC and high frequency characteristics of GAA poly-Si nanosheet TFTs with single channel and stack double channel are investigated. Device with different nanosheet width ( W_{nw} ) are also discussed and compared.
ISSN:2161-4644