Design of CMOS composite transistors with improved operating region

Proposes two new CMOS composite transistors with an improved operating region by reducing a threshold voltage. The proposed composite transistors 1 and 2 employ a p-type folded composite transistor and an electronic Zener diode in order to decrease the threshold voltage, respectively. The simulation...

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Bibliographic Details
Main Authors: Young-Gyu Yu, Seok-Woo Choi, Dong-Yong Kim, Kyu-Tae Park, Hong-Jo Ahn
Format: Conference Proceeding
Language:English
Subjects:
Analog circuits
Breakdown voltage
Circuit simulation
Circuits and systems
Diodes
Low voltage
MOS devices
Signal processing
Threshold voltage
Transconductance
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Summary:Proposes two new CMOS composite transistors with an improved operating region by reducing a threshold voltage. The proposed composite transistors 1 and 2 employ a p-type folded composite transistor and an electronic Zener diode in order to decrease the threshold voltage, respectively. The simulation has been carried out using 0.25/spl mu/m n-well process with 2.5V supply voltage.
DOI:10.1109/MWSCAS.2000.951393