Possibility of Cu2Mg for Liner-Barrier Free Interconnects

Cu 2 Mg intermetallic compound was selected as a candidate material for liner-barrier free interconnects for advanced LSI interconnects. The blanket films of Cu 2 Mg showed an excellent resistivity scaling with resistivity value of only 25 μΩcm at a film thickness of 5 nm. However, a thick MgO layer...

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Bibliographic Details
Main Authors: Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Yahagi, Masataka, Koike, Junichi
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Atomic layer deposition
Conductivity
Conferences
Cu 2 Mg
Cu alternative
FCC
intermetallic compound
Silicon compounds
transition-metal aluminide
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Summary:Cu 2 Mg intermetallic compound was selected as a candidate material for liner-barrier free interconnects for advanced LSI interconnects. The blanket films of Cu 2 Mg showed an excellent resistivity scaling with resistivity value of only 25 μΩcm at a film thickness of 5 nm. However, a thick MgO layer was formed within the underlying SiO 2 layer by interface reaction between Cu 2 Mg and SiO 2 . Progressive growth of MgO made it unfavorable for Cu 2 Mg to be used as liner-barrier free interconnects.
ISSN:2380-6338
DOI:10.1109/IITC47697.2020.9515588