Numerical simulation on the effect of the working temperature on the response sensitivity for GaAs-based blocked impurity band (BIB) terahertz detectors

working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector. An optimal device temperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivit...

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Bibliographic Details
Main Authors: Wang, Xiaodong, Ma, Weiyi, Wang, Bingbing, Zhang, Chuansheng, Chen, Yulu, Zhang, Haoxing
Format: Conference Proceeding
Language:English
Subjects:
Blocked-impurity-band (BIB)
Detectors
Gallium arsenide
Gallium Arsenide (GaAs)
Impurities
Numerical simulation
Performance evaluation
Response sensitivity
Sensitivity
Temperature
Temperature sensors
Terahertz detector
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Summary:working temperature is a critical parameter to evaluate the performance of Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector. An optimal device temperature can ensure the best response sensitivity. Therefore, we analyze the effect of device temperature on the response sensitivity characteristics of GaAs-based BIB detector by numerical simulation. The simulated result shows that the optimal device temperature is nearly 6K.
ISSN:2158-3242
DOI:10.1109/NUSOD52207.2021.9541473