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A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement
This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of K -band voltage-controlled oscillators (VCOs) by increasing the quality ( Q -) factor of the switched resonator. The proposed switched resonator consists of a high Q -factor half-circle inductor...
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Published in: | IEEE transactions on very large scale integration (VLSI) systems 2021-12, Vol.29 (12), p.2163-2171 |
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creator | Mansour, Islam Mansour, Marwa Aboualalaa, Mohamed Allam, Ahmed Abdel-Rahman, Adel B. Pokharel, Ramesh K. Abo-Zahhad, Mohammed |
description | This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of K -band voltage-controlled oscillators (VCOs) by increasing the quality ( Q -) factor of the switched resonator. The proposed switched resonator consists of a high Q -factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18- \mu \text{m} CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz. |
doi_str_mv | 10.1109/TVLSI.2021.3115050 |
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The proposed switched resonator consists of a high <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.]]></description><identifier>ISSN: 1063-8210</identifier><identifier>EISSN: 1557-9999</identifier><identifier>DOI: 10.1109/TVLSI.2021.3115050</identifier><identifier>CODEN: IEVSE9</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">K -band ; <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Q -factor ; Capacitance ; Circuits ; CMOS ; Figure of merit ; Frequencies ; MOS varactor ; Noise sensitivity ; Phase noise ; phase noise (PN) ; Q-factor ; Resonance scattering ; Resonant frequency ; Resonators ; S parameters ; sensitivity ; switched resonator ; Switches ; Switching circuits ; Tuning ; Varactors ; Voltage controlled oscillators ; voltage-controlled oscillator (VCO)</subject><ispartof>IEEE transactions on very large scale integration (VLSI) systems, 2021-12, Vol.29 (12), p.2163-2171</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-e042101385e74859f40573902fca929bca711807cc380aae626ca9649035b9f23</citedby><cites>FETCH-LOGICAL-c295t-e042101385e74859f40573902fca929bca711807cc380aae626ca9649035b9f23</cites><orcidid>0000-0002-2145-6774 ; 0000-0002-9950-1950 ; 0000-0001-8501-1101</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9559736$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,54795</link.rule.ids></links><search><creatorcontrib>Mansour, Islam</creatorcontrib><creatorcontrib>Mansour, Marwa</creatorcontrib><creatorcontrib>Aboualalaa, Mohamed</creatorcontrib><creatorcontrib>Allam, Ahmed</creatorcontrib><creatorcontrib>Abdel-Rahman, Adel B.</creatorcontrib><creatorcontrib>Pokharel, Ramesh K.</creatorcontrib><creatorcontrib>Abo-Zahhad, Mohammed</creatorcontrib><title>A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement</title><title>IEEE transactions on very large scale integration (VLSI) systems</title><addtitle>TVLSI</addtitle><description><![CDATA[This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of <inline-formula> <tex-math notation="LaTeX">K </tex-math></inline-formula>-band voltage-controlled oscillators (VCOs) by increasing the quality (<inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-) factor of the switched resonator. The proposed switched resonator consists of a high <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.]]></description><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">K -band</subject><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Q -factor</subject><subject>Capacitance</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Figure of merit</subject><subject>Frequencies</subject><subject>MOS varactor</subject><subject>Noise sensitivity</subject><subject>Phase noise</subject><subject>phase noise (PN)</subject><subject>Q-factor</subject><subject>Resonance scattering</subject><subject>Resonant frequency</subject><subject>Resonators</subject><subject>S parameters</subject><subject>sensitivity</subject><subject>switched resonator</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Tuning</subject><subject>Varactors</subject><subject>Voltage controlled oscillators</subject><subject>voltage-controlled oscillator (VCO)</subject><issn>1063-8210</issn><issn>1557-9999</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9UFFPwjAQXowmIvoH9KWJz8Nrt27rIyGiJCjGAa9NKTcpgQ7bDcO_twjxHu4uufu-7-6LonsKPUpBPE3n43LUY8BoL6GUA4eLqEM5z2MR4jL0kCVxwShcRzferwFomgroRL5P3tpNYxbKLsl8MCEzb-wXUaT8MY1e4ZKU6Ax68om-tspqJFXtyNBYJEOH3y1afSDT1h5RJVpvGrM3zYEc-T5WyiN5r03Io-3O1Xvcom1uo6tKbTzenWs3mg2fp4PXeDx5GQ3641gzwZsYIQ330qTgmKcFF1UKPE8EsEorwcRCq5zSAnKtkwKUwoxlYZCFtxK-EBVLutHjiTcoh0N9I9d162yQlCwDlgvOkyxssdOWdrX3Diu5c2ar3EFSkEdz5Z-58miuPJsbQA8nkEHEf0AgFHmg_AU6TXUV</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Mansour, Islam</creator><creator>Mansour, Marwa</creator><creator>Aboualalaa, Mohamed</creator><creator>Allam, Ahmed</creator><creator>Abdel-Rahman, Adel B.</creator><creator>Pokharel, Ramesh K.</creator><creator>Abo-Zahhad, Mohammed</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2145-6774</orcidid><orcidid>https://orcid.org/0000-0002-9950-1950</orcidid><orcidid>https://orcid.org/0000-0001-8501-1101</orcidid></search><sort><creationdate>20211201</creationdate><title>A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement</title><author>Mansour, Islam ; Mansour, Marwa ; Aboualalaa, Mohamed ; Allam, Ahmed ; Abdel-Rahman, Adel B. ; Pokharel, Ramesh K. ; Abo-Zahhad, Mohammed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-e042101385e74859f40573902fca929bca711807cc380aae626ca9649035b9f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">K -band</topic><topic><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Q -factor</topic><topic>Capacitance</topic><topic>Circuits</topic><topic>CMOS</topic><topic>Figure of merit</topic><topic>Frequencies</topic><topic>MOS varactor</topic><topic>Noise sensitivity</topic><topic>Phase noise</topic><topic>phase noise (PN)</topic><topic>Q-factor</topic><topic>Resonance scattering</topic><topic>Resonant frequency</topic><topic>Resonators</topic><topic>S parameters</topic><topic>sensitivity</topic><topic>switched resonator</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Tuning</topic><topic>Varactors</topic><topic>Voltage controlled oscillators</topic><topic>voltage-controlled oscillator (VCO)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mansour, Islam</creatorcontrib><creatorcontrib>Mansour, Marwa</creatorcontrib><creatorcontrib>Aboualalaa, Mohamed</creatorcontrib><creatorcontrib>Allam, Ahmed</creatorcontrib><creatorcontrib>Abdel-Rahman, Adel B.</creatorcontrib><creatorcontrib>Pokharel, Ramesh K.</creatorcontrib><creatorcontrib>Abo-Zahhad, Mohammed</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mansour, Islam</au><au>Mansour, Marwa</au><au>Aboualalaa, Mohamed</au><au>Allam, Ahmed</au><au>Abdel-Rahman, Adel B.</au><au>Pokharel, Ramesh K.</au><au>Abo-Zahhad, Mohammed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement</atitle><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle><stitle>TVLSI</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>29</volume><issue>12</issue><spage>2163</spage><epage>2171</epage><pages>2163-2171</pages><issn>1063-8210</issn><eissn>1557-9999</eissn><coden>IEVSE9</coden><abstract><![CDATA[This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of <inline-formula> <tex-math notation="LaTeX">K </tex-math></inline-formula>-band voltage-controlled oscillators (VCOs) by increasing the quality (<inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-) factor of the switched resonator. The proposed switched resonator consists of a high <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TVLSI.2021.3115050</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-2145-6774</orcidid><orcidid>https://orcid.org/0000-0002-9950-1950</orcidid><orcidid>https://orcid.org/0000-0001-8501-1101</orcidid></addata></record> |
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title | A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement |
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