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A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement

This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of K -band voltage-controlled oscillators (VCOs) by increasing the quality ( Q -) factor of the switched resonator. The proposed switched resonator consists of a high Q -factor half-circle inductor...

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Published in:IEEE transactions on very large scale integration (VLSI) systems 2021-12, Vol.29 (12), p.2163-2171
Main Authors: Mansour, Islam, Mansour, Marwa, Aboualalaa, Mohamed, Allam, Ahmed, Abdel-Rahman, Adel B., Pokharel, Ramesh K., Abo-Zahhad, Mohammed
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cited_by cdi_FETCH-LOGICAL-c295t-e042101385e74859f40573902fca929bca711807cc380aae626ca9649035b9f23
cites cdi_FETCH-LOGICAL-c295t-e042101385e74859f40573902fca929bca711807cc380aae626ca9649035b9f23
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container_title IEEE transactions on very large scale integration (VLSI) systems
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creator Mansour, Islam
Mansour, Marwa
Aboualalaa, Mohamed
Allam, Ahmed
Abdel-Rahman, Adel B.
Pokharel, Ramesh K.
Abo-Zahhad, Mohammed
description This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of K -band voltage-controlled oscillators (VCOs) by increasing the quality ( Q -) factor of the switched resonator. The proposed switched resonator consists of a high Q -factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18- \mu \text{m} CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.
doi_str_mv 10.1109/TVLSI.2021.3115050
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The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.]]></description><identifier>ISSN: 1063-8210</identifier><identifier>EISSN: 1557-9999</identifier><identifier>DOI: 10.1109/TVLSI.2021.3115050</identifier><identifier>CODEN: IEVSE9</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>&lt;italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"&gt;K -band ; &lt;italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"&gt;Q -factor ; Capacitance ; Circuits ; CMOS ; Figure of merit ; Frequencies ; MOS varactor ; Noise sensitivity ; Phase noise ; phase noise (PN) ; Q-factor ; Resonance scattering ; Resonant frequency ; Resonators ; S parameters ; sensitivity ; switched resonator ; Switches ; Switching circuits ; Tuning ; Varactors ; Voltage controlled oscillators ; voltage-controlled oscillator (VCO)</subject><ispartof>IEEE transactions on very large scale integration (VLSI) systems, 2021-12, Vol.29 (12), p.2163-2171</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The proposed switched resonator consists of a high <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. 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The proposed switched resonator consists of a high <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of −110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of −186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V ) is −181.4 dBc/Hz.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TVLSI.2021.3115050</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-2145-6774</orcidid><orcidid>https://orcid.org/0000-0002-9950-1950</orcidid><orcidid>https://orcid.org/0000-0001-8501-1101</orcidid></addata></record>
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<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Q -factor
Capacitance
Circuits
CMOS
Figure of merit
Frequencies
MOS varactor
Noise sensitivity
Phase noise
phase noise (PN)
Q-factor
Resonance scattering
Resonant frequency
Resonators
S parameters
sensitivity
switched resonator
Switches
Switching circuits
Tuning
Varactors
Voltage controlled oscillators
voltage-controlled oscillator (VCO)
title A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement
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