Improved Self-Curing Effect in a MOSFET With Gate Biasing

Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( {I}_{\textbf {FWD}} ). This curing effect can be further enhanced by the simultaneous application of gate biasing, which does not influence the {I}_{\textbf {FWD}} . A...

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Bibliographic Details
Published in:IEEE electron device letters 2021-12, Vol.42 (12), p.1731-1734
Main Authors: Lee, Geon-Beom, Jung, Jin-Woo, Kim, Choong-Ki, Bang, Tewook, Yoo, Min-Soo, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
Carrier injection
Curing
Damage
Field effect transistors
Forward junction current
Frequency analysis
gate biasing
Hot carrier injection
Human computer interaction
joule heat
Junctions
LF noise
Logic gates
low-frequency noise (LFN)
metal-oxide-semiconductor field-effect transistor (MOSFET)
MOSFET
MOSFETs
Ohmic dissipation
Resistance heating
self-curing
Voltage measurement
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Summary:Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( {I}_{\textbf {FWD}} ). This curing effect can be further enhanced by the simultaneous application of gate biasing, which does not influence the {I}_{\textbf {FWD}} . A MOSFET was intentionally degraded by harsh hot-carrier injection (HCI) then the damage was cured and nearly returned to its pristine state. The improved self-curing effect was quantitatively verified using low-frequency noise (LFN) analyses. Self-curing by internal heat from the {I}_{\textbf {FWD}} more effectively cured the HCI damage than a nonself-curing using external heat from a hot chuck.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3119281