GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

This letter reports a frequency doubler based on GaN Schottky barrier diodes (SBDs) with high pulse output power. An improved chip configuration with six anodes distributed in two rows was utilized to improve the power-handling capacity. An accurate diode model was developed from DC and small-signal...

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Bibliographic Details
Published in:IEEE electron device letters 2021-12, Vol.42 (12), p.1739-1742
Main Authors: Song, Xubo, Liang, Shixiong, Lv, Yuanjie, Zhang, Zhenpeng, Zhang, Lisen, Fu, Xingchang, Guo, Yanmin, Gu, Guodong, Wang, Yuangang, Fang, Yuan, Bu, Aimin, Cai, Shujun, Feng, Zhihong
Format: Article
Language:English
Subjects:
Configurations
doubler
Frequency doublers
Gallium nitrides
GaN SBD
Millimeter wave devices
millimeter-wave
multiplier
Power amplifiers
Power generation
Radio frequency
Schottky diodes
Semiconductor device measurement
Temperature measurement
THz source
Transient analysis
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Summary:This letter reports a frequency doubler based on GaN Schottky barrier diodes (SBDs) with high pulse output power. An improved chip configuration with six anodes distributed in two rows was utilized to improve the power-handling capacity. An accurate diode model was developed from DC and small-signal S-parameters from 0.5 to 110 GHz. The frequency doubler was designed with a balanced structure and assembled with a flip-chip configuration. When a GaN-based high-power amplifier was used to drive the doubler, it delivered a peak output power of 1006 mW at 216 GHz with a corresponding conversion efficiency of 15%. The GaN-based frequency doubler shows potential for use in high-power terahertz source applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3119391