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A 64-Gbaud Transimpedance Amplifier in 130nm SiGe Technology with Effective Broadband Techniques
In this paper, a 64-Gbaud transimpedance amplifier in 130nm SiGe technology is presented. The π-network broadband technique and shunt-shunt RC feedback are proposed to achieve high gain and wide bandwidth simultaneously. The small-signal results show a transimpedance gain of 50.2 dBQ with a 3-dB ban...
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Main Authors: | , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | In this paper, a 64-Gbaud transimpedance amplifier in 130nm SiGe technology is presented. The π-network broadband technique and shunt-shunt RC feedback are proposed to achieve high gain and wide bandwidth simultaneously. The small-signal results show a transimpedance gain of 50.2 dBQ with a 3-dB bandwidth exceeding the measurement limit of 67 GHz. An eye-diagram of 64-Gbaud can be obtained with the time domain measurements. The proposed TIA consumes 34.5 mW and occupies a core area of only 0.1 mm 2 . |
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ISSN: | 2576-7216 |
DOI: | 10.1109/IMS19712.2021.9575014 |