Characterizaion of Photoconductive Semiconductor Switches with Periodic-Trench Structure

Despite that non-linear mode operation of GaAs photoconductive semiconductor switches (PCSSs) has a noble high gain photoelectric behavior, it suffer from electrode degradation as well as its destruction at high current driving. Several ways to avoid current concentration have been suggested by some...

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Main Authors: Kim, Min-Seong, Ryu, Jiheon, Kim, Cheon Ho, Baek, Sung-Hyun
Format: Conference Proceeding
Language:English
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Conferences
Costs
Degradation
Electrodes
Gallium arsenide
Plasmas
Sawing machines
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Ryu, Jiheon
Kim, Cheon Ho
Baek, Sung-Hyun
description Despite that non-linear mode operation of GaAs photoconductive semiconductor switches (PCSSs) has a noble high gain photoelectric behavior, it suffer from electrode degradation as well as its destruction at high current driving. Several ways to avoid current concentration have been suggested by some frontiers, but those still require additional photonic devices or complex semiconductor processing 1 . In this paper, we will show a simple, low cost way to create periodic-trench structures (PTSs) for isolating each current path by using a usual wafer sawing machines.
doi_str_mv 10.1109/ICOPS35962.2018.9575473
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subjects Conferences
Costs
Degradation
Electrodes
Gallium arsenide
Plasmas
Sawing machines
title Characterizaion of Photoconductive Semiconductor Switches with Periodic-Trench Structure
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