Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements

This paper presents a new method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors. After measuring the total junction capacitance, this method describes how to split the value between an intrinsi...

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Bibliographic Details
Main Authors: Ardouin, B., Zimmer, T., Mnif, H., Fouillat, P.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Capacitance measurement
Capacitance-voltage characteristics
Differential equations
Electric resistance
Electric variables measurement
Frequency measurement
Hafnium
Implants
Silicon carbide
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Summary:This paper presents a new method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors. After measuring the total junction capacitance, this method describes how to split the value between an intrinsic (C/sub ji/) and an extrinsic (C/sub jx/) part versus bias. From the resulting capacitance voltage behaviour, C/sub ji/(V) and C/sub jx/(V), the capacitance specific model parameters (C/sub j0/, V/sub j/, /spl gamma//sub 1/) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models such as the HICUM or MEXTRAM model.
DOI:10.1109/BIPOL.2001.957870