Silicon carbide devices for power applications

Summary form only given. Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16 W/cm, and increased breakdown voltage SITs having a 400 V blocking voltage and 35 W/cm output power. Progress with pulse devices includes a 800 W UHF SIT and a...

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Bibliographic Details
Main Author: Clarke, R.C.
Format: Conference Proceeding
Language:English
Subjects:
L-band
Microwave devices
Microwave transistors
Packaging
Power generation
Pulse amplifiers
Pulse circuits
Silicon carbide
Thermal conductivity
Transmitters
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Description
Summary:Summary form only given. Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16 W/cm, and increased breakdown voltage SITs having a 400 V blocking voltage and 35 W/cm output power. Progress with pulse devices includes a 800 W UHF SIT and a 900 W L-band SIT. In SiC power switching the SiC BJT is being explored for high speed, high efficiency applications.
DOI:10.1109/BIPOL.2001.957872