The Photosensitive Mechanism of Gap-Type Amorphous Silicon TFT

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) can provide high photo current in simple device structure, which makes it suitable for large-area-sensing applications. The reason why the photo current is much higher when the device is operated in the on-region than that in the off-regio...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-12, Vol.68 (12), p.6177-6181
Main Authors: Tai, Ya-Hsiang, Tu, Cheng-Che, Yuan, Yi-Cheng, Chang, Yu-Jia, Wang, Pin-Chun, Kuo, Yu-Wen
Format: Article
Language:English
Subjects:
Amorphous silicon
device
Electric potential
gap-type
Lighting
Logic gates
mechanism
photosensitive
Photosensitivity
Photovoltaic cells
Semiconductor devices
Temperature effects
Thin film transistors
thin-film transistors (TFTs)
Time factors
Time response
Transistors
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Summary:Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) can provide high photo current in simple device structure, which makes it suitable for large-area-sensing applications. The reason why the photo current is much higher when the device is operated in the on-region than that in the off-region is not well studied. In this article, we propose the mechanism to explain this special phenomenon for the gap-type a-Si TFT. The feature of potential well is supported by TCAD simulation. The mechanism is further verified from the perspective of temperature effect and time response.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3120231