Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory

Charge trapping is arguably the most important detrimental mechanism distorting the ideal characteristics of MOS transistors, and nonradiative multiphonon (NMP) models have been demonstrated to provide a very accurate description. For the calculation of the NMP rates at room temperature or above, si...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-12, Vol.68 (12), p.6365-6371
Main Authors: Michl, Jakob, Grill, Alexander, Waldhoer, Dominic, Goes, Wolfgang, Kaczer, Ben, Linten, Dimitri, Parvais, Bertrand, Govoreanu, Bogdan, Radu, Iuliana, Waltl, Michael, Grasser, Tibor
Format: Article
Language:English
Subjects:
Advanced CMOS
Approximation
bias temperature instability (BTI)
Computational modeling
Couplings
cryo-CMOS
cryogenic
Cryogenic engineering
Cryogenic temperature
Cryogenics
IP networks
Mathematical analysis
MOS devices
Oscillators
physical modeling
Quantum mechanics
Room temperature
Saddle points
Stationary state
Transistors
Trapping
Wave functions
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Summary:Charge trapping is arguably the most important detrimental mechanism distorting the ideal characteristics of MOS transistors, and nonradiative multiphonon (NMP) models have been demonstrated to provide a very accurate description. For the calculation of the NMP rates at room temperature or above, simple semiclassical approximations have been successfully used to describe this intricate mechanism. However, for the computation of charge transition rates at cryogenic temperatures, it is necessary to use the full quantum mechanical description based on Fermi's golden rule. Since this is computationally expensive and often not feasible, we discuss an efficient method based on the Wentzel-Kramers-Brillouin (WKB) approximation in combination with the saddle point method and benchmark this approximation against the full model. We show that the approximation delivers excellent results and can, hence, be used to model charge trapping behavior at cryogenic temperatures.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3116931