A Body-Biasing Technique for Single-Event Transient Mitigation in 28-nm Bulk CMOS Process

Single-event transient (SET) glitches can be modified by body-biasing controlling techniques. In this article, a body-biasing configuration is proposed in combinational circuits, which plays no role during devices' normal operation, but significantly mitigates SET disturbance as ion strike happ...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2021-12, Vol.68 (12), p.2717-2723
Main Authors: Liu, Jingtian, Liang, Bin, Guo, Yang, Chen, Jianjun, Chi, Yaqing, Sun, Qian, Song, Shengyu, Yuan, Hengzhou
Format: Article
Language:English
Subjects:
Body-biasing configuration
Chains
CMOS process
Configurations
Heavy ions
Mitigation
Radiation hardening (electronics)
radiation-hardened-by-design (RHBD)
Single event upsets
single-event transient (SET)
Transistors
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Summary:Single-event transient (SET) glitches can be modified by body-biasing controlling techniques. In this article, a body-biasing configuration is proposed in combinational circuits, which plays no role during devices' normal operation, but significantly mitigates SET disturbance as ion strike happens. NOR cell chains and NAND cell chains serve as cases to investigate the impact of the proposed configuration on SET vulnerabilities under two groups of heavy-ion experiments. Experimental data illustrate that transistors with body tied to source (BTS) significantly reduce the SET cross section compared with the normal designs. The physical mechanism of the proposed technique is quantitatively analyzed in detail.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3123335