Complementary FET for Advanced Technology Nodes: Where Does It Stand?

Nanosheet on nanosheet configured complementary FET (CFET) is investigated using the Materials to Systems Co-optimization (MSCO TM ) modeling framework at both device and circuit levels developed at Applied Materials. Compared to N3 FinFET with the same footprint for a single device, both nMOS and p...

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Bibliographic Details
Main Authors: Jiang, Liu, Pal, Ashish, Bazizi, El Mehdi, Ren, He, Naik, Mehul, Alexander, Blessy, Ayyagari, Buvna
Format: Conference Proceeding
Language:English
Subjects:
Circuit Modeling
Complementary FET
DTCO
Field effect transistors
FinFET
FinFETs
Inverters
Nano-sheet FET
Nanoscale devices
Object recognition
Resistance
Ring Oscillator
Semiconductor process modeling
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Summary:Nanosheet on nanosheet configured complementary FET (CFET) is investigated using the Materials to Systems Co-optimization (MSCO TM ) modeling framework at both device and circuit levels developed at Applied Materials. Compared to N3 FinFET with the same footprint for a single device, both nMOS and pMOS for CFET shows lower drive current than FinFET by 26% and 45% respectively. At the circuit level, CFET shows lower iso-power frequency by 20%, mainly due to lower drivability and high super-via resistance.
ISSN:1946-1577
DOI:10.1109/SISPAD54002.2021.9592562