Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Cha...

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Bibliographic Details
Main Authors: Gao, Xujiao, Mendez, Juan P., Lu, Tzu-Ming, Anderson, Evan M., Campbell, DeAnna M., Ivie, Jeffrey A., Schmucker, Scott W., Grine, Albert, Lu, Ping, Tracy, Lisa A., Arghavani, Reza, Misra, Shashank
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
atomic precision advanced manufacturing (APAM)
band-to-band tunneling
Charon
Geometry
Performance evaluation
Semiconductor device modeling
Simulation
TCAD
TFETs
Tunneling
tunneling field effect transistor (TFET)
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Summary:The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.
ISSN:1946-1577
DOI:10.1109/SISPAD54002.2021.9592578