Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method

This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the...

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Bibliographic Details
Main Authors: Ruthardt, Johannes, Hirning, David, Sharma, Kanuj, Nitzsche, Maximilian, Ziegler, Philipp, Fischer, Manuel, Roth-Stielow, Jorg
Format: Conference Proceeding
Language:English
Subjects:
junction temperature measurement
Logic gates
reliability
Resistors
Sensitivity
SiC
Temperature dependence
Temperature distribution
Temperature measurement
Temperature sensors
TSEP
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Summary:This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit's impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.
ISSN:2329-3748
DOI:10.1109/ECCE47101.2021.9595166