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Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method

This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the...

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Main Authors:	Ruthardt, Johannes, Hirning, David, Sharma, Kanuj, Nitzsche, Maximilian, Ziegler, Philipp, Fischer, Manuel, Roth-Stielow, Jorg
Format:	Conference Proceeding
Language:	English
Subjects:	junction temperature measurement Logic gates reliability Resistors Sensitivity SiC Temperature dependence Temperature distribution Temperature measurement Temperature sensors TSEP
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creator	Ruthardt, Johannes Hirning, David Sharma, Kanuj Nitzsche, Maximilian Ziegler, Philipp Fischer, Manuel Roth-Stielow, Jorg
description	This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit's impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.
doi_str_mv	10.1109/ECCE47101.2021.9595166
format	conference_proceeding
fullrecord	<record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_9595166</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9595166</ieee_id><sourcerecordid>9595166</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-2b79040867f3f4f2304aa6aad5f99a27925b73203e5f5f6ca67391262b1ac9713</originalsourceid><addsrcrecordid>eNotkMFqAjEURdNCodb6BYWSHxibl0ySybIM1loUFyp0J0990YhmZBIL_ftadHXgcu9ZXMZeQfQBhHsb1PWgtCCgL4WEvtNOgzF37AmsrECD0t_3rCOVdIWyZfXIeinthRBgKlkJ6LDTKP5QymGLOTQx8SbyaTyESPzrHNf_GZ_T8UQt5nNLfEKYLjxSzNw3LZ-FuphMZx-DeeKLFOKW5x3xIWYqZmEb8cBHcU9Xz4Tyrtk8swePh0S9G7tscVnXn8V4OhzV7-MiSKFyIVfWiVJUxnrlSy-VKBEN4kZ751BaJ_XKqkuVtNferNFY5UAauQJcOwuqy16u3kBEy1Mbjtj-Lm8HqT-bPFru</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method</title><source>IEEE Xplore All Conference Series</source><creator>Ruthardt, Johannes ; Hirning, David ; Sharma, Kanuj ; Nitzsche, Maximilian ; Ziegler, Philipp ; Fischer, Manuel ; Roth-Stielow, Jorg</creator><creatorcontrib>Ruthardt, Johannes ; Hirning, David ; Sharma, Kanuj ; Nitzsche, Maximilian ; Ziegler, Philipp ; Fischer, Manuel ; Roth-Stielow, Jorg</creatorcontrib><description>This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit's impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.</description><identifier>EISSN: 2329-3748</identifier><identifier>EISBN: 172815135X</identifier><identifier>EISBN: 9781728151359</identifier><identifier>DOI: 10.1109/ECCE47101.2021.9595166</identifier><language>eng</language><publisher>IEEE</publisher><subject>junction temperature measurement ; Logic gates ; reliability ; Resistors ; Sensitivity ; SiC ; Temperature dependence ; Temperature distribution ; Temperature measurement ; Temperature sensors ; TSEP</subject><ispartof>2021 IEEE Energy Conversion Congress and Exposition (ECCE), 2021, p.5354-5359</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9595166$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,23910,23911,25119,27904,54533,54910</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9595166$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ruthardt, Johannes</creatorcontrib><creatorcontrib>Hirning, David</creatorcontrib><creatorcontrib>Sharma, Kanuj</creatorcontrib><creatorcontrib>Nitzsche, Maximilian</creatorcontrib><creatorcontrib>Ziegler, Philipp</creatorcontrib><creatorcontrib>Fischer, Manuel</creatorcontrib><creatorcontrib>Roth-Stielow, Jorg</creatorcontrib><title>Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method</title><title>2021 IEEE Energy Conversion Congress and Exposition (ECCE)</title><addtitle>ECCE</addtitle><description>This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit's impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.</description><subject>junction temperature measurement</subject><subject>Logic gates</subject><subject>reliability</subject><subject>Resistors</subject><subject>Sensitivity</subject><subject>SiC</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>TSEP</subject><issn>2329-3748</issn><isbn>172815135X</isbn><isbn>9781728151359</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2021</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMFqAjEURdNCodb6BYWSHxibl0ySybIM1loUFyp0J0990YhmZBIL_ftadHXgcu9ZXMZeQfQBhHsb1PWgtCCgL4WEvtNOgzF37AmsrECD0t_3rCOVdIWyZfXIeinthRBgKlkJ6LDTKP5QymGLOTQx8SbyaTyESPzrHNf_GZ_T8UQt5nNLfEKYLjxSzNw3LZ-FuphMZx-DeeKLFOKW5x3xIWYqZmEb8cBHcU9Xz4Tyrtk8swePh0S9G7tscVnXn8V4OhzV7-MiSKFyIVfWiVJUxnrlSy-VKBEN4kZ751BaJ_XKqkuVtNferNFY5UAauQJcOwuqy16u3kBEy1Mbjtj-Lm8HqT-bPFru</recordid><startdate>20211010</startdate><enddate>20211010</enddate><creator>Ruthardt, Johannes</creator><creator>Hirning, David</creator><creator>Sharma, Kanuj</creator><creator>Nitzsche, Maximilian</creator><creator>Ziegler, Philipp</creator><creator>Fischer, Manuel</creator><creator>Roth-Stielow, Jorg</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20211010</creationdate><title>Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method</title><author>Ruthardt, Johannes ; Hirning, David ; Sharma, Kanuj ; Nitzsche, Maximilian ; Ziegler, Philipp ; Fischer, Manuel ; Roth-Stielow, Jorg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-2b79040867f3f4f2304aa6aad5f99a27925b73203e5f5f6ca67391262b1ac9713</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2021</creationdate><topic>junction temperature measurement</topic><topic>Logic gates</topic><topic>reliability</topic><topic>Resistors</topic><topic>Sensitivity</topic><topic>SiC</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>TSEP</topic><toplevel>online_resources</toplevel><creatorcontrib>Ruthardt, Johannes</creatorcontrib><creatorcontrib>Hirning, David</creatorcontrib><creatorcontrib>Sharma, Kanuj</creatorcontrib><creatorcontrib>Nitzsche, Maximilian</creatorcontrib><creatorcontrib>Ziegler, Philipp</creatorcontrib><creatorcontrib>Fischer, Manuel</creatorcontrib><creatorcontrib>Roth-Stielow, Jorg</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ruthardt, Johannes</au><au>Hirning, David</au><au>Sharma, Kanuj</au><au>Nitzsche, Maximilian</au><au>Ziegler, Philipp</au><au>Fischer, Manuel</au><au>Roth-Stielow, Jorg</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method</atitle><btitle>2021 IEEE Energy Conversion Congress and Exposition (ECCE)</btitle><stitle>ECCE</stitle><date>2021-10-10</date><risdate>2021</risdate><spage>5354</spage><epage>5359</epage><pages>5354-5359</pages><eissn>2329-3748</eissn><eisbn>172815135X</eisbn><eisbn>9781728151359</eisbn><abstract>This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit's impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.</abstract><pub>IEEE</pub><doi>10.1109/ECCE47101.2021.9595166</doi><tpages>6</tpages></addata></record>
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source	IEEE Xplore All Conference Series
subjects	junction temperature measurement Logic gates reliability Resistors Sensitivity SiC Temperature dependence Temperature distribution Temperature measurement Temperature sensors TSEP
title	Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T04%3A22%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Investigations%20on%20Online%20Junction%20Temperature%20Measurement%20for%20SiC-MOSFETs%20Using%20the%20Gate-Signal%20Injection%20Method&rft.btitle=2021%20IEEE%20Energy%20Conversion%20Congress%20and%20Exposition%20(ECCE)&rft.au=Ruthardt,%20Johannes&rft.date=2021-10-10&rft.spage=5354&rft.epage=5359&rft.pages=5354-5359&rft.eissn=2329-3748&rft_id=info:doi/10.1109/ECCE47101.2021.9595166&rft.eisbn=172815135X&rft.eisbn_list=9781728151359&rft_dat=%3Cieee_CHZPO%3E9595166%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-2b79040867f3f4f2304aa6aad5f99a27925b73203e5f5f6ca67391262b1ac9713%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9595166&rfr_iscdi=true