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Low-frequency 1/f noise in a graphene/silicon X-ray detector
Photodetectors based on graphene attracted widespread attention because of their superior properties. We have evaluated the low-frequency noise of a graphene-based X-ray detector manufactured from graphene oxide (GO) through a laser process. The low-frequency noise's temperature dependence indi...
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Main Authors: | , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | Photodetectors based on graphene attracted widespread attention because of their superior properties. We have evaluated the low-frequency noise of a graphene-based X-ray detector manufactured from graphene oxide (GO) through a laser process. The low-frequency noise's temperature dependence indicates a nonuniform energy distribution of traps in the device due to a distribution of defects and impurities, most likely due to O-vacancies and hydrogen. |
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ISSN: | 2694-510X |
DOI: | 10.1109/3M-NANO49087.2021.9599829 |