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Current dependent performance test used on different types of silicon field emitter arrays

A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduce...

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Main Authors:	Schels, A., Edler, S., Hansch, W., Bachmann, M., Herdl, F., Dusberg, F., Eder, M., Meyer, M., Dudek, M., Pahlke, A., Schreiner, R.
Format:	Conference Proceeding
Language:	English
Subjects:	Blades Conductivity Current measurement Doping Fabrication Field emitter arrays Geometry
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creator	Schels, A. Edler, S. Hansch, W. Bachmann, M. Herdl, F. Dusberg, F. Eder, M. Meyer, M. Dudek, M. Pahlke, A. Schreiner, R.
description	A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.
doi_str_mv	10.1109/IVNC52431.2021.9600787
format	conference_proceeding
fullrecord	<record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_9600787</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9600787</ieee_id><sourcerecordid>9600787</sourcerecordid><originalsourceid>FETCH-LOGICAL-i118t-3e4d0250e96820f543b395134d16fcae703614c7630e43d54fdab7b390b37e323</originalsourceid><addsrcrecordid>eNotkN1KAzEUhKMgWGufQJC8wNZzcpLs7qUs_hSK3qiINyXdnECk3S5JetG3t2qvZmA-hmGEuEWYI0J7t_h46YzShHMFCuetBaib-kxcobVGK9O0n-dioqiByhLipZjl_A0ApBAb0BPx1e1T4qFIzyMP_teNnMIubd3Qsyyci9xn9nI3SB9D4D-4HEbOchdkjpvYH6MQeeMlb2MpnKRLyR3ytbgIbpN5dtKpeH98eOueq-Xr06K7X1bxuKFUxNqDMsCtbRQEo2lNrUHSHm3oHddAFnVfWwLW5I0O3q3rIwNrqpkUTcXNf29k5tWY4talw-p0Bf0AtKpUGA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Current dependent performance test used on different types of silicon field emitter arrays</title><source>IEEE Xplore All Conference Series</source><creator>Schels, A. ; Edler, S. ; Hansch, W. ; Bachmann, M. ; Herdl, F. ; Dusberg, F. ; Eder, M. ; Meyer, M. ; Dudek, M. ; Pahlke, A. ; Schreiner, R.</creator><creatorcontrib>Schels, A. ; Edler, S. ; Hansch, W. ; Bachmann, M. ; Herdl, F. ; Dusberg, F. ; Eder, M. ; Meyer, M. ; Dudek, M. ; Pahlke, A. ; Schreiner, R.</creatorcontrib><description>A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.</description><identifier>EISSN: 2380-6311</identifier><identifier>EISBN: 166542589X</identifier><identifier>EISBN: 9781665425896</identifier><identifier>DOI: 10.1109/IVNC52431.2021.9600787</identifier><language>eng</language><publisher>IEEE</publisher><subject>Blades ; Conductivity ; Current measurement ; Doping ; Fabrication ; Field emitter arrays ; Geometry</subject><ispartof>2021 34th International Vacuum Nanoelectronics Conference (IVNC), 2021, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9600787$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,23929,23930,25139,27924,54554,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9600787$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Schels, A.</creatorcontrib><creatorcontrib>Edler, S.</creatorcontrib><creatorcontrib>Hansch, W.</creatorcontrib><creatorcontrib>Bachmann, M.</creatorcontrib><creatorcontrib>Herdl, F.</creatorcontrib><creatorcontrib>Dusberg, F.</creatorcontrib><creatorcontrib>Eder, M.</creatorcontrib><creatorcontrib>Meyer, M.</creatorcontrib><creatorcontrib>Dudek, M.</creatorcontrib><creatorcontrib>Pahlke, A.</creatorcontrib><creatorcontrib>Schreiner, R.</creatorcontrib><title>Current dependent performance test used on different types of silicon field emitter arrays</title><title>2021 34th International Vacuum Nanoelectronics Conference (IVNC)</title><addtitle>IVNC</addtitle><description>A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.</description><subject>Blades</subject><subject>Conductivity</subject><subject>Current measurement</subject><subject>Doping</subject><subject>Fabrication</subject><subject>Field emitter arrays</subject><subject>Geometry</subject><issn>2380-6311</issn><isbn>166542589X</isbn><isbn>9781665425896</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2021</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkN1KAzEUhKMgWGufQJC8wNZzcpLs7qUs_hSK3qiINyXdnECk3S5JetG3t2qvZmA-hmGEuEWYI0J7t_h46YzShHMFCuetBaib-kxcobVGK9O0n-dioqiByhLipZjl_A0ApBAb0BPx1e1T4qFIzyMP_teNnMIubd3Qsyyci9xn9nI3SB9D4D-4HEbOchdkjpvYH6MQeeMlb2MpnKRLyR3ytbgIbpN5dtKpeH98eOueq-Xr06K7X1bxuKFUxNqDMsCtbRQEo2lNrUHSHm3oHddAFnVfWwLW5I0O3q3rIwNrqpkUTcXNf29k5tWY4talw-p0Bf0AtKpUGA</recordid><startdate>20210705</startdate><enddate>20210705</enddate><creator>Schels, A.</creator><creator>Edler, S.</creator><creator>Hansch, W.</creator><creator>Bachmann, M.</creator><creator>Herdl, F.</creator><creator>Dusberg, F.</creator><creator>Eder, M.</creator><creator>Meyer, M.</creator><creator>Dudek, M.</creator><creator>Pahlke, A.</creator><creator>Schreiner, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20210705</creationdate><title>Current dependent performance test used on different types of silicon field emitter arrays</title><author>Schels, A. ; Edler, S. ; Hansch, W. ; Bachmann, M. ; Herdl, F. ; Dusberg, F. ; Eder, M. ; Meyer, M. ; Dudek, M. ; Pahlke, A. ; Schreiner, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-3e4d0250e96820f543b395134d16fcae703614c7630e43d54fdab7b390b37e323</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Blades</topic><topic>Conductivity</topic><topic>Current measurement</topic><topic>Doping</topic><topic>Fabrication</topic><topic>Field emitter arrays</topic><topic>Geometry</topic><toplevel>online_resources</toplevel><creatorcontrib>Schels, A.</creatorcontrib><creatorcontrib>Edler, S.</creatorcontrib><creatorcontrib>Hansch, W.</creatorcontrib><creatorcontrib>Bachmann, M.</creatorcontrib><creatorcontrib>Herdl, F.</creatorcontrib><creatorcontrib>Dusberg, F.</creatorcontrib><creatorcontrib>Eder, M.</creatorcontrib><creatorcontrib>Meyer, M.</creatorcontrib><creatorcontrib>Dudek, M.</creatorcontrib><creatorcontrib>Pahlke, A.</creatorcontrib><creatorcontrib>Schreiner, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schels, A.</au><au>Edler, S.</au><au>Hansch, W.</au><au>Bachmann, M.</au><au>Herdl, F.</au><au>Dusberg, F.</au><au>Eder, M.</au><au>Meyer, M.</au><au>Dudek, M.</au><au>Pahlke, A.</au><au>Schreiner, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Current dependent performance test used on different types of silicon field emitter arrays</atitle><btitle>2021 34th International Vacuum Nanoelectronics Conference (IVNC)</btitle><stitle>IVNC</stitle><date>2021-07-05</date><risdate>2021</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><eissn>2380-6311</eissn><eisbn>166542589X</eisbn><eisbn>9781665425896</eisbn><abstract>A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.</abstract><pub>IEEE</pub><doi>10.1109/IVNC52431.2021.9600787</doi><tpages>2</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	EISSN: 2380-6311
ispartof	2021 34th International Vacuum Nanoelectronics Conference (IVNC), 2021, p.1-2
issn	2380-6311
language	eng
recordid	cdi_ieee_primary_9600787
source	IEEE Xplore All Conference Series
subjects	Blades Conductivity Current measurement Doping Fabrication Field emitter arrays Geometry
title	Current dependent performance test used on different types of silicon field emitter arrays
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T20%3A45%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Current%20dependent%20performance%20test%20used%20on%20different%20types%20of%20silicon%20field%20emitter%20arrays&rft.btitle=2021%2034th%20International%20Vacuum%20Nanoelectronics%20Conference%20(IVNC)&rft.au=Schels,%20A.&rft.date=2021-07-05&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.eissn=2380-6311&rft_id=info:doi/10.1109/IVNC52431.2021.9600787&rft.eisbn=166542589X&rft.eisbn_list=9781665425896&rft_dat=%3Cieee_CHZPO%3E9600787%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i118t-3e4d0250e96820f543b395134d16fcae703614c7630e43d54fdab7b390b37e323%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9600787&rfr_iscdi=true