A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

A 320 \times 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- \mu \text{m} two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are propo...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-06, Vol.69 (6), p.2858-2864
Main Authors: Zhang, Bing, Hu, Congzhen, Lai, Junhua, Xin, Youze, Guo, Zhuoqi, Xue, Zhongming, Dong, Li, Wang, Chi, Lei, Shuyu, Zhang, Guohe, Geng, Li
Format: Article
Language:English
Subjects:
Capacitance
Demodulation
Doping
Electric fields
Electric potential
Front-side illumination (FSI)
indirect time-of-flight (i-ToF) image sensor
Logic gates
low power consumption
Modulation
pinned layer doping
potential buffer region (PBR)
Power consumption
pump gate modulator (PGM)
Semiconductor process modeling
Sensors
Voltage
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Summary:A 320 \times 240 indirect time-of-flight (i-ToF) image sensor with a 5.6- \mu \text{m} two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump gate modulator (PGM), are proposed to achieve a maximum lateral modulation electric field of 1500 V/cm under the front-side illumination (FSI) process. As a result, the proposed time-of-flight (ToF) sensor shows 200-mW power consumption and 54% demodulation contrast (DC) at 50-MHz modulation frequency, depth noise less than 1% with 940-nm illuminator from 0.3 to 3 m.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3123045