970 nm DBR Broad-Area Semiconductor Lasers with 60% Conversion Efficiency

Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a highly-asymmetric epitaxy provide 14W CW-mode power at 60% efficiency with 0.6nm spectral width (95% power).

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Bibliographic Details
Main Authors: Crump, Paul, Miah, Md. Jarez, Fricke, Jorg, Wilkens, Martin, Kreutzmann, Sabrina, Wenzel, Hans, Knigge, Andrea
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial layers
Laser stability
Measurement by laser beam
Power lasers
Semiconductor device measurement
Semiconductor lasers
Wavelength measurement
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Description
Summary:Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a highly-asymmetric epitaxy provide 14W CW-mode power at 60% efficiency with 0.6nm spectral width (95% power).
ISSN:1947-6981
DOI:10.1109/ISLC51662.2021.9615726