Lateral Optical Confinement Enhanced GaInAsP Membrane Laser on Si for On-chip Optical Interconnection

To reduce energy consumption of GaInAsP membrane laser on Si, we propose to introduce buried-ridge-waveguide (BRW) structure to enhance lateral optical confinement. By comparing the BRW structure with the conventional flat structure, 20% reduction of threshold current and 35% of differential resista...

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Bibliographic Details
Main Authors: Takahashi, Naoki, Fang, Weicheng, Ohiso, Yoshitaka, Amemiya, Tomohiro, Nishiyama, Nobuhiko
Format: Conference Proceeding
Language:English
Subjects:
Energy consumption
Optical interconnections
Resistance
Semiconductor lasers
Silicon
System-on-chip
Threshold current
Online Access:Get full text
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Summary:To reduce energy consumption of GaInAsP membrane laser on Si, we propose to introduce buried-ridge-waveguide (BRW) structure to enhance lateral optical confinement. By comparing the BRW structure with the conventional flat structure, 20% reduction of threshold current and 35% of differential resistance were demonstrated.
ISSN:1947-6981
DOI:10.1109/ISLC51662.2021.9615765