Lateral Optical Confinement Enhanced GaInAsP Membrane Laser on Si for On-chip Optical Interconnection

To reduce energy consumption of GaInAsP membrane laser on Si, we propose to introduce buried-ridge-waveguide (BRW) structure to enhance lateral optical confinement. By comparing the BRW structure with the conventional flat structure, 20% reduction of threshold current and 35% of differential resista...

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Main Authors: Takahashi, Naoki, Fang, Weicheng, Ohiso, Yoshitaka, Amemiya, Tomohiro, Nishiyama, Nobuhiko
Format: Conference Proceeding
Language:English
Subjects:
Energy consumption
Optical interconnections
Resistance
Semiconductor lasers
Silicon
System-on-chip
Threshold current
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creator Takahashi, Naoki
Fang, Weicheng
Ohiso, Yoshitaka
Amemiya, Tomohiro
Nishiyama, Nobuhiko
description To reduce energy consumption of GaInAsP membrane laser on Si, we propose to introduce buried-ridge-waveguide (BRW) structure to enhance lateral optical confinement. By comparing the BRW structure with the conventional flat structure, 20% reduction of threshold current and 35% of differential resistance were demonstrated.
doi_str_mv 10.1109/ISLC51662.2021.9615765
format conference_proceeding
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subjects Energy consumption
Optical interconnections
Resistance
Semiconductor lasers
Silicon
System-on-chip
Threshold current
title Lateral Optical Confinement Enhanced GaInAsP Membrane Laser on Si for On-chip Optical Interconnection
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