Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars

1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output power >1.8kW with 67% maximum efficiency at 298K and >2.2kW with 74% maximum efficiency at 203K...

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Bibliographic Details
Main Authors: Jarez Miah, Md, Boni, Anisuzzaman, Martin, Dominik, Della Casa, Pietro, Crump, Paul
Format: Conference Proceeding
Language:English
Subjects:
Laser applications
Laser excitation
Power generation
Power lasers
Quantum cascade lasers
Resonators
Semiconductor lasers
Online Access:Get full text
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Summary:1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output power >1.8kW with 67% maximum efficiency at 298K and >2.2kW with 74% maximum efficiency at 203K.
ISSN:1947-6981
DOI:10.1109/ISLC51662.2021.9615832