A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances

In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30%...

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Bibliographic Details
Main Authors: Wu, Zheng, Xia, Chao, Yi, Bo, Cheng, Junji, Huang, HaiMeng, Kong, MouFu, Yang, HongQiang, Shi, WenKun
Format: Conference Proceeding
Language:English
Subjects:
Conferences
MOSFET
Silicon carbide
Split gate flash memory cells
Switching loss
Voltage
Online Access:Request full text
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Summary:In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The C GD and C GS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (E tot ) is reduced by 39.4% compared to that of the C-TPMOS.
ISSN:2162-755X
DOI:10.1109/ASICON52560.2021.9620233