A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances

In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30%...

Full description

Saved in:
Bibliographic Details
Main Authors: Wu, Zheng, Xia, Chao, Yi, Bo, Cheng, Junji, Huang, HaiMeng, Kong, MouFu, Yang, HongQiang, Shi, WenKun
Format: Conference Proceeding
Language:English
Subjects:
Conferences
MOSFET
Silicon carbide
Split gate flash memory cells
Switching loss
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Wu, Zheng
Xia, Chao
Yi, Bo
Cheng, Junji
Huang, HaiMeng
Kong, MouFu
Yang, HongQiang
Shi, WenKun
description In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The C GD and C GS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (E tot ) is reduced by 39.4% compared to that of the C-TPMOS.
doi_str_mv 10.1109/ASICON52560.2021.9620233
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_9620233</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9620233</ieee_id><sourcerecordid>9620233</sourcerecordid><originalsourceid>FETCH-LOGICAL-i118t-79d5f918715e73a51515a56e536f907672d758a0945de3ae75296adcfd70a58c3</originalsourceid><addsrcrecordid>eNotkM1KxDAUhaMgOI7zBG7yAh1zk7lJsyzFn4HRLuqAuyE2t06kf6RV8e2n4HAWH4cD3-IwxkGsAYS9z8ptXryiRC3WUkhYWz1DqQt2A1rjRqXaqEu2kKBlYhDfr9lqHL-EECCMtdos2D7j49CEKfl0E_Ey5HyK1FVH_lKUjw9v_DdMR07tB3lPnn93YegbF7kPvSde95GHdoj9z7wNFOfeuq6i8ZZd1a4ZaXXmku1nWf6c7IqnbZ7tkgCQTomxHmsLqQEkoxzCHIeaUOnaCqON9AZTJ-wGPSlHBqXVzle1N8JhWqklu_v3BiI6DDG0Lv4dzi-oE040UZE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances</title><source>IEEE Xplore All Conference Series</source><creator>Wu, Zheng ; Xia, Chao ; Yi, Bo ; Cheng, Junji ; Huang, HaiMeng ; Kong, MouFu ; Yang, HongQiang ; Shi, WenKun</creator><creatorcontrib>Wu, Zheng ; Xia, Chao ; Yi, Bo ; Cheng, Junji ; Huang, HaiMeng ; Kong, MouFu ; Yang, HongQiang ; Shi, WenKun</creatorcontrib><description>In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The C GD and C GS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (E tot ) is reduced by 39.4% compared to that of the C-TPMOS.</description><identifier>EISSN: 2162-755X</identifier><identifier>EISBN: 1665438673</identifier><identifier>EISBN: 9781665438674</identifier><identifier>DOI: 10.1109/ASICON52560.2021.9620233</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conferences ; MOSFET ; Silicon carbide ; Split gate flash memory cells ; Switching loss ; Voltage</subject><ispartof>2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9620233$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,23909,23910,25118,27902,54530,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9620233$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wu, Zheng</creatorcontrib><creatorcontrib>Xia, Chao</creatorcontrib><creatorcontrib>Yi, Bo</creatorcontrib><creatorcontrib>Cheng, Junji</creatorcontrib><creatorcontrib>Huang, HaiMeng</creatorcontrib><creatorcontrib>Kong, MouFu</creatorcontrib><creatorcontrib>Yang, HongQiang</creatorcontrib><creatorcontrib>Shi, WenKun</creatorcontrib><title>A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances</title><title>2021 IEEE 14th International Conference on ASIC (ASICON)</title><addtitle>ASICON</addtitle><description>In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The C GD and C GS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (E tot ) is reduced by 39.4% compared to that of the C-TPMOS.</description><subject>Conferences</subject><subject>MOSFET</subject><subject>Silicon carbide</subject><subject>Split gate flash memory cells</subject><subject>Switching loss</subject><subject>Voltage</subject><issn>2162-755X</issn><isbn>1665438673</isbn><isbn>9781665438674</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2021</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkM1KxDAUhaMgOI7zBG7yAh1zk7lJsyzFn4HRLuqAuyE2t06kf6RV8e2n4HAWH4cD3-IwxkGsAYS9z8ptXryiRC3WUkhYWz1DqQt2A1rjRqXaqEu2kKBlYhDfr9lqHL-EECCMtdos2D7j49CEKfl0E_Ey5HyK1FVH_lKUjw9v_DdMR07tB3lPnn93YegbF7kPvSde95GHdoj9z7wNFOfeuq6i8ZZd1a4ZaXXmku1nWf6c7IqnbZ7tkgCQTomxHmsLqQEkoxzCHIeaUOnaCqON9AZTJ-wGPSlHBqXVzle1N8JhWqklu_v3BiI6DDG0Lv4dzi-oE040UZE</recordid><startdate>20211026</startdate><enddate>20211026</enddate><creator>Wu, Zheng</creator><creator>Xia, Chao</creator><creator>Yi, Bo</creator><creator>Cheng, Junji</creator><creator>Huang, HaiMeng</creator><creator>Kong, MouFu</creator><creator>Yang, HongQiang</creator><creator>Shi, WenKun</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20211026</creationdate><title>A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances</title><author>Wu, Zheng ; Xia, Chao ; Yi, Bo ; Cheng, Junji ; Huang, HaiMeng ; Kong, MouFu ; Yang, HongQiang ; Shi, WenKun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-79d5f918715e73a51515a56e536f907672d758a0945de3ae75296adcfd70a58c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Conferences</topic><topic>MOSFET</topic><topic>Silicon carbide</topic><topic>Split gate flash memory cells</topic><topic>Switching loss</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Wu, Zheng</creatorcontrib><creatorcontrib>Xia, Chao</creatorcontrib><creatorcontrib>Yi, Bo</creatorcontrib><creatorcontrib>Cheng, Junji</creatorcontrib><creatorcontrib>Huang, HaiMeng</creatorcontrib><creatorcontrib>Kong, MouFu</creatorcontrib><creatorcontrib>Yang, HongQiang</creatorcontrib><creatorcontrib>Shi, WenKun</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wu, Zheng</au><au>Xia, Chao</au><au>Yi, Bo</au><au>Cheng, Junji</au><au>Huang, HaiMeng</au><au>Kong, MouFu</au><au>Yang, HongQiang</au><au>Shi, WenKun</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances</atitle><btitle>2021 IEEE 14th International Conference on ASIC (ASICON)</btitle><stitle>ASICON</stitle><date>2021-10-26</date><risdate>2021</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><eissn>2162-755X</eissn><eisbn>1665438673</eisbn><eisbn>9781665438674</eisbn><abstract>In this paper, a split-gate SiC trench MOSFET (SG-TMOS) with embedded unipolar diode for reverse conduction is proposed. By introducing the split-gate, an embedded MOS-channel diode is formed during the reverse conducting state, and helps to reduce the on-state voltage drop to 1.87 V, which is ~30% reduced compared with that of the conventional trench/planar MOSFET (C-TPMOS). Besides, the dynamic performances of the SG-TMOS are significantly improved. The C GD and C GS decrease by 80.3% and 35.2% compared with that of the C-TPMOS. As a result, the total switching loss (E tot ) is reduced by 39.4% compared to that of the C-TPMOS.</abstract><pub>IEEE</pub><doi>10.1109/ASICON52560.2021.9620233</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier EISSN: 2162-755X
ispartof 2021 IEEE 14th International Conference on ASIC (ASICON), 2021, p.1-4
issn 2162-755X
language eng
recordid cdi_ieee_primary_9620233
source IEEE Xplore All Conference Series
subjects Conferences
MOSFET
Silicon carbide
Split gate flash memory cells
Switching loss
Voltage
title A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T16%3A34%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20split-gate%20SiC%20trench%20MOSFET%20with%20embedded%20unipolar%20diode%20for%20improved%20performances&rft.btitle=2021%20IEEE%2014th%20International%20Conference%20on%20ASIC%20(ASICON)&rft.au=Wu,%20Zheng&rft.date=2021-10-26&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.eissn=2162-755X&rft_id=info:doi/10.1109/ASICON52560.2021.9620233&rft.eisbn=1665438673&rft.eisbn_list=9781665438674&rft_dat=%3Cieee_CHZPO%3E9620233%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i118t-79d5f918715e73a51515a56e536f907672d758a0945de3ae75296adcfd70a58c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9620233&rfr_iscdi=true