Variability Effects in FinFET Transistors and Emerging NC-FinFET

This work investigates, the impact of different variability sources 14nm FinFET transistors compared to their counterpart Negative Capacitance FinFETs transistors. We focus on NC-FinFETs that are constructed in a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration, unlike existing state...

Full description

Saved in:
Bibliographic Details
Main Authors: Gupta, Aniket, Chauhan, Nitanshu, Prakash, Om, Amrouch, Hussam
Format: Conference Proceeding
Language:English
Subjects:
Beyond-CMOS
FinFET
FinFETs
Hafnium oxide
Integrated circuits
NC-FinFET
Reliability
Reliability engineering
Rough surfaces
Surface roughness
Threshold voltage
Variability
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work investigates, the impact of different variability sources 14nm FinFET transistors compared to their counterpart Negative Capacitance FinFETs transistors. We focus on NC-FinFETs that are constructed in a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration, unlike existing state of the art, which employs Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) structure in its variability analysis. Our investigation confirms that the existing conclusion, in which NC-FinFETs exhibit a higher immunity against variation, still holds even in MFIS structure. We study the impact that each of (1) random dopant fluctuation, (2) work-function variation, (3) HfO 2 dielectric surface roughness, (4) interfacial layer surface roughness, and (5) ferroelectric variation has individually and jointly on the threshold voltage, sub-threshold swing, ON current and OFF current of NC-nFinFETs and NC-pFinFETs in comparison to their counterpart (baseline) FinFET devices.
ISSN:2691-0462
DOI:10.1109/ICICDT51558.2021.9626531