Variability Effects in FinFET Transistors and Emerging NC-FinFET

This work investigates, the impact of different variability sources 14nm FinFET transistors compared to their counterpart Negative Capacitance FinFETs transistors. We focus on NC-FinFETs that are constructed in a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration, unlike existing state...

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Main Authors: Gupta, Aniket, Chauhan, Nitanshu, Prakash, Om, Amrouch, Hussam
Format: Conference Proceeding
Language:English
Subjects:
Beyond-CMOS
FinFET
FinFETs
Hafnium oxide
Integrated circuits
NC-FinFET
Reliability
Reliability engineering
Rough surfaces
Surface roughness
Threshold voltage
Variability
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creator Gupta, Aniket
Chauhan, Nitanshu
Prakash, Om
Amrouch, Hussam
description This work investigates, the impact of different variability sources 14nm FinFET transistors compared to their counterpart Negative Capacitance FinFETs transistors. We focus on NC-FinFETs that are constructed in a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration, unlike existing state of the art, which employs Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) structure in its variability analysis. Our investigation confirms that the existing conclusion, in which NC-FinFETs exhibit a higher immunity against variation, still holds even in MFIS structure. We study the impact that each of (1) random dopant fluctuation, (2) work-function variation, (3) HfO 2 dielectric surface roughness, (4) interfacial layer surface roughness, and (5) ferroelectric variation has individually and jointly on the threshold voltage, sub-threshold swing, ON current and OFF current of NC-nFinFETs and NC-pFinFETs in comparison to their counterpart (baseline) FinFET devices.
doi_str_mv 10.1109/ICICDT51558.2021.9626531
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subjects Beyond-CMOS
FinFET
FinFETs
Hafnium oxide
Integrated circuits
NC-FinFET
Reliability
Reliability engineering
Rough surfaces
Surface roughness
Threshold voltage
Variability
title Variability Effects in FinFET Transistors and Emerging NC-FinFET
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