Vertical Integration of Pressure/Humidity/Temperature Sensors for CMOS-MEMS Environmental Sensing Hub

This study presents the environmental sensing hub with vertical integration of humidity, pressure, and temperature sensors on a single chip (Fig. 1). The presented device is fabricated through TSMC 0.18 µ m 1P6M CMOS platform, and in-house post-CMOS processes. The proposed environmental sensing hub...

Full description

Saved in:
Bibliographic Details
Main Authors: Lin, Yung-Chian, Lee, Ya-Chu, Yang, Chia-Hung, Fang, Weileun
Format: Conference Proceeding
Language:English
Subjects:
Humidity measurement
Pressure sensors
Semiconductor device measurement
Sensitivity
Temperature measurement
Temperature sensors
Thermometers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study presents the environmental sensing hub with vertical integration of humidity, pressure, and temperature sensors on a single chip (Fig. 1). The presented device is fabricated through TSMC 0.18 µ m 1P6M CMOS platform, and in-house post-CMOS processes. The proposed environmental sensing hub has following features: (1) monolithic integration of humidity (H), pressure (P), and temperature (T) sensors to form the sensing hub, (2) vertical integration of H/P/T sensors to reduce the footprint of chip (as compare with the existing side by side designs). Measurement results of presented environmental sensing hub are: humidity sensor with sensitivity of 2.025fF/%RH, pressure sensor with sensitivity of 0.38fF/kPa, and diode temperature detector with sensitivity of 1.6mV/ o C.
ISSN:2168-9229
DOI:10.1109/SENSORS47087.2021.9639781