Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

GaN Schottky barrier diode (SBD) temperature sensors with TiN, Ni, and NiN anodes were fabricated in this study to evaluate the effect of anode material and inhomogeneous interface on the sensitivity. The temperature-dependent current-voltage curves negatively shift with the increasing temperature,...

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Bibliographic Details
Published in:IEEE sensors journal 2022-02, Vol.22 (3), p.1933-1938
Main Authors: Li, Liuan, Pu, Taofei, Li, Xiaobo, Ao, Jin-Ping
Format: Article
Language:English
Subjects:
Anode effect
Anodes
Electrode materials
GaN
Inhomogeneity
Nickel
Nonhomogeneous media
Schottky barrier diode
Schottky diodes
Sensitivity
Sensors
Temperature dependence
temperature sensor
Temperature sensors
Tin
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Summary:GaN Schottky barrier diode (SBD) temperature sensors with TiN, Ni, and NiN anodes were fabricated in this study to evaluate the effect of anode material and inhomogeneous interface on the sensitivity. The temperature-dependent current-voltage curves negatively shift with the increasing temperature, presenting a slight inhomogeneous barrier behavior. Compared with the Ni anode, the TiN and NiN anodes suppress the inhomogeneity. The sensitivity obtained from the sub-threshold region follows the same tendency for all the SBDs, which increases with the decreasing current level. Furthermore, the NiN anode temperature sensor shows slightly higher sensitivity and better linearity compared with the Ni and TiN anodes, with the highest sensitivity of 2.54 mV/K. The discrepancy between the measured sensitivity and the theoretical value is ascribed to the inhomogeneous interface barrier.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2021.3133895