Single-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration

• Published in: IEEE journal of selected topics in quantum electronics 2022-05, Vol.28 (3: Hybrid Integration for Silicon Photonics), p.1-6
• Main Authors: Zhou, Taojie, Tang, Mingchu, Li, Haochuan, Zhang, Zhan, Cui, Yuzhou, Park, Jae-Seong, Martin, Markel, Baron, Thierry, Chen, Siming, Liu, Huiyun, Zhang, Zhaoyu
• Format: Article
• Language: English
• Subjects: CMOS; Continuous radiation; Crystal growth; Dissimilar materials; Distributed feedback devices; Energy consumption; Integrated circuits; Laser modes; Lasers; Light sources; Monolithic integration; nanolasers; Nanoscale devices; photonic crystal; Photonic crystals; Physics; Quantum dots; Room temperature; Silicon; silicon photonics; Silicon substrates; Single mode operation; Substrates; Waveguide lasers
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2021.3133546

Ultra-compact III-V nanolasers monolithically integrated on Si with ultra-low energy consumption and small modal volume have been emerged as one of the most promising candidates to achieve Si on-chip light sources. However, the significant material dissimilarities between III-V and Si fundamentally limit the performance of Si-based III-V nanolasers. In this work, we report 1.3 μm InAs/GaAs quantum-dot photonic-crystal (PhC) nanobeam lasers directly grown on complementary metal-oxide-semiconductor compatible on-axis Si (001) substrates. The continuous-wave optically pumped PhC nanobeam lasers exhibited a single-mode operation, with an ultra-low lasing threshold of ∼ 0.8 μW at room temperature. In addition, a nanoscale physical volume of ∼ 8 × 0.53 × 0.36 μm 3 (∼ 25 (λ n −1 ) 3 ) was realized through a small number of air-holes in PhC nanobeam laser. The promising characteristics of the PhC nanobeam lasers with small footprint and ultra-low energy consumption show their advanced potential towards densely integrated Si photonic integrated circuits.