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RF LDMOS characterization and its compact modeling

This paper presents characterization of power LDMOS using device simulation and analytical modeling. Features of the LDMOS such as graded channel and quasi-saturation effect which result in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using device simulati...

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Bibliographic Details
Main Authors: Jaejune Jang, Tornblad, O., Arnborg, T., Qiang Chen, Banerjee, K., Zhiping Yu, Dutton, R.W.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:This paper presents characterization of power LDMOS using device simulation and analytical modeling. Features of the LDMOS such as graded channel and quasi-saturation effect which result in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using device simulation. A compact model for LDMOS is implemented in HSPICE based on additional lumped elements, combined with the BSIM3 MOSFET model.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2001.967053