High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×10 5 (λ/n) -3 .

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Bibliographic Details
Main Authors: Qubaisi, Kenaish Al, Popovic, Milos A.
Format: Conference Proceeding
Language:English
Subjects:
Conferences
Current measurement
Nanoscale devices
Optical resonators
Photonic crystals
Q measurement
Silicon photonics
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Description
Summary:We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×10 5 (λ/n) -3 .
ISSN:1949-209X
DOI:10.1109/GFP51802.2021.9673876