Reduction of leakage current of crystallized Ta2O5 through substitution with TiO2

In this study, we investigate the influence of the addition of TiO/sub 2/ into Ta/sub 2/O/sub 5/ thin films at various composition formed by metalorganic decomposition (MOD). The effects of post-deposition rapid thermal annealing (RTA) temperature on the structural and electrical properties of Ta/su...

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Bibliographic Details
Main Authors: Salam, K.M.A., Konishi, H., Fukuda, H., Nomura, S.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Dielectric loss measurement
Dielectric losses
Dielectric materials
Dielectrics and electrical insulation
Leakage current
Optical films
Temperature
Transistors
X-ray scattering
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Summary:In this study, we investigate the influence of the addition of TiO/sub 2/ into Ta/sub 2/O/sub 5/ thin films at various composition formed by metalorganic decomposition (MOD). The effects of post-deposition rapid thermal annealing (RTA) temperature on the structural and electrical properties of Ta/sub 2/O/sub 5/-TiO/sub 2/ thin films were also analyzed.
DOI:10.1109/IWGI.2001.967581