Striking change of carrier lifetime in biased InGaN quantum wells: effect of tunneling and piezoelectric field

We have performed spectrum-resolved and various time-resolved measurements in InGaN/GaN LED structures, varying the external voltage from +2 to -30 V. The lifetime shows a drastic decrease from 4 ns to 2 ps.

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Bibliographic Details
Main Authors: Jho, Y.D., Oh, E.S., Kim, D.S., Yhang, J.S.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier lifetime
Gallium nitride
Laser excitation
Light emitting diodes
Physics
Pulse measurements
Pump lasers
Solids
Tunneling
Voltage
Online Access:Request full text
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Description
Summary:We have performed spectrum-resolved and various time-resolved measurements in InGaN/GaN LED structures, varying the external voltage from +2 to -30 V. The lifetime shows a drastic decrease from 4 ns to 2 ps.
DOI:10.1109/CLEOPR.2001.967988