Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

• Published in: IEEE transactions on electron devices 2022-04, Vol.69 (4), p.1900-1905
• Main Authors: Chen, Weizhong, Qin, Haifeng, Zhang, Hongsheng, Han, Zhengsheng
• Format: Article
• Language: English
• Subjects: Accumulation; Accumulation mode triple gate (ATG); Current density; Doping; Electric potential; electron accumulation effect; Electrons; extended superjunction gate (ESG); FinFETs; Leakage currents; Logic gates; R ON; sp; Telecommunications
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2022.3147731

An Extended Superjunction (SJ) Gate (ESG) Lateral Double-diffused Metal-Oxide Semiconductor (LDMOS) with full bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated by the SENTAURUS. It features a Fin Gate including Planar Gate (PG) and ESG: the ESG is formed by the P-Pillar and two integrated back-to-back diodes \text{D}_{{2}} and \text{D}_{{1}} , then the gate potential {V}_{\text {GS}} is extended through the whole P-Pillar. Additionally, the gate oxide {W}_{\text {oxide}} is inserted between the P- and N-Pillars of the SJ. At the ON-state, the 3-D electron channels are produced at the P-well by the Fin Gate, and the extra bulk accumulation effect is induced at the sidewalls of the N-Pillar by the positive {V}_{\text {GS}} of the ESG, which can significantly decrease the {R}_{\mathrm{\scriptstyle {ON, SP}}} . At the OFF-state, the N- and P-Pillars deplete from each other through the gate oxide {W}_{\text {oxide}} like the conventional SJ. The 3-D simulation results show that the BV and {R}_{\mathrm{\scriptstyle {ON, SP}}} are 171 V and 0.49 \text{m}\Omega \cdot \text {cm}^{{2}} , respectively. The FOM is high up to 59.6 MW/cm 2 , which breaks through the silicon limit of the RESURF.