Dynamics of the Electron Temperature and Power Absorption in Capacitively Coupled Radio Frequency Discharges

In low pressure (\mathrm{p} < 10\ \text{Pa}) capacitively coupled radio frequency (CCRF) discharges, the optimization of technological processes, such as sputtering, etching and plasma enhanced chemical vapor deposition requires an essential understanding of the electron dynamics. This is because...

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Bibliographic Details
Main Authors: Wilczek, S., Schulze, J., Brinkmann, R. P., Donko, Z., Trieschmann, J., Mussenbrock, T.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Conferences
Discharges (electric)
Etching
Ionization
Plasma temperature
Plasmas
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Summary:In low pressure (\mathrm{p} < 10\ \text{Pa}) capacitively coupled radio frequency (CCRF) discharges, the optimization of technological processes, such as sputtering, etching and plasma enhanced chemical vapor deposition requires an essential understanding of the electron dynamics. This is because electrons with a specific energy threshold, e.g., ionization energy, are responsible for the generation of positive ions and radicals. Therefore, the two most important questions in low pressure CCRF discharges are, how do the electrons gain and loss their energy during one radio frequency cycle1 and what is a typical electron temperature?
ISSN:2576-7208
DOI:10.1109/ICOPS37625.2020.9717603