Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO

World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, and operation was confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate voltage according to the data. In this study, despite using a fixed capacitor plate voltage, we showed that memory operation is poss...

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Main Authors: Sung, Minchul, Rho, Kwangmyoung, Kim, Jayong, Cheon, Junho, Choi, Kiyoung, Kim, Dohee, Em, Hoseok, Park, Gyeongcheol, Woo, Jungwook, Lee, Yeongyu, Ko, Jaehyeon, Kim, Moonhoi, Lee, Gwangyeob, Ryu, Seung Wook, Sheen, Dong Sun, Joo, Yangsung, Kim, Seiyon, Cho, Chang Hyun, Na, Myung-Hee, Kim, Jinkook
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Electrodes
Low voltage
Manufacturing
Random access memory
Switches
Time measurement
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Summary:World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, and operation was confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate voltage according to the data. In this study, despite using a fixed capacitor plate voltage, we showed that memory operation is possible even at a low voltage of ±0.6V by using the pinched hysteresis of 5nm-thick ultra-thin HZO. We measured the switching speed by changing the write time from 5ns to 80ns. 70% of the total polarization can be switched within 20ns tWR (like the DRAM), and the remaining 30% responds to a wide range of write time between 20 and 80ns. For improving the switching speed, it is necessary to reduce bulk defects or design schemes such as Vcore overdrive.
ISSN:2156-017X
DOI:10.1109/IEDM19574.2021.9720545