2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike pre...

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Bibliographic Details
Main Authors: Hu, G., Lauer, G., Sun, J. Z., Hashemi, P., Safranski, C., Brown, S. L., Buzi, L., Edwards, E. R. J., D'Emic, C. P., Galligan, E., Gottwald, M. G., Gunawan, O., Jung, H., Kim, J., Latzko, K., Nowak, J. J., Trouilloud, P. L., Zare, S., Worledge, D. C.
Format: Conference Proceeding
Language:English
Subjects:
Integrated circuits
Magnetoresistive devices
Random access memory
Resistance
Switches
Torque
Writing
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Summary:We introduce a new device for reducing the switching current, Ic, in Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM). The Double Spin-torque Magnetic Tunnel Junction (DS-MTJ) uses spin torque from both top and bottom free-layer interfaces to reduce Ic by 2x. However, unlike previous work using Double Magnetic Tunnel Junctions (DMTJs), the DS-MTJ does not suffer from reduced magneto resistance (MR) due to increased series resistance. Experimental data using 10 ns write pulses demonstrates 2x reduction in Ic, and reliable writing down to an error-floor of write-error-rate (WER) = 1e-6.
ISSN:2156-017X
DOI:10.1109/IEDM19574.2021.9720691