Investigation on the Effect of Gate Overlap/Underlap on the 1T DRAM Cell

In this paper, the influences of overlap/underlap at gate-to-source/drain region on the 1T DRAM cell are examined by technology computer-aided design (TCAD) simulation. Since the operation of 1T DRAM cell is based on the band-to-band tunneling (BTBT) mechanism at body-drain junction, it is expected...

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Main Authors: Go, Seungwon, Park, Jae Yeon, Kim, Shinhee, Noh, Hyung Ju, Lee, Dong Keun, Park, So Ra, Kim, Sangwan
Format: Conference Proceeding
Language:English
Subjects:
1T DRAM
band-to-band tunneling (BTBT)
Degradation
Design automation
Electric variables
Logic gates
overlap
Random access memory
Sensors
SiGe
Tunneling
underlap
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Park, Jae Yeon
Kim, Shinhee
Noh, Hyung Ju
Lee, Dong Keun
Park, So Ra
Kim, Sangwan
description In this paper, the influences of overlap/underlap at gate-to-source/drain region on the 1T DRAM cell are examined by technology computer-aided design (TCAD) simulation. Since the operation of 1T DRAM cell is based on the band-to-band tunneling (BTBT) mechanism at body-drain junction, it is expected that the structure variation at gate-to-drain region affects more on the device than at gate-to-source region. Based on this expectation, the overlap/underlap at gate-to-drain region is more effect on than gate-to-source region as shown in results.
doi_str_mv 10.1109/ICEIC54506.2022.9748455
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subjects 1T DRAM
band-to-band tunneling (BTBT)
Degradation
Design automation
Electric variables
Logic gates
overlap
Random access memory
Sensors
SiGe
Tunneling
underlap
title Investigation on the Effect of Gate Overlap/Underlap on the 1T DRAM Cell
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