An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process

• Main Authors: Suda, Ikuo, Kishida, Ryo, Kobayashi, Kazutoshi
• Format: Conference Proceeding
• Language: English
• Subjects: bias temperature instability (BTI); Degradation; forward body bias (FBB); Negative bias temperature instability; Power measurement; ring oscillator (RO); Silicon-on-insulator; Simulation; Thermal variables control; Voltage measurement
• ISSN: 1938-1891
• DOI: 10.1109/IRPS48227.2022.9764544

We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.