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An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process
We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement res...
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| creator | Suda, Ikuo Kishida, Ryo Kobayashi, Kazutoshi |
| description | We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias. |
| doi_str_mv | 10.1109/IRPS48227.2022.9764544 |
| format | conference_proceeding |
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Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.</description><subject>bias temperature instability (BTI)</subject><subject>Degradation</subject><subject>forward body bias (FBB)</subject><subject>Negative bias temperature instability</subject><subject>Power measurement</subject><subject>ring oscillator (RO)</subject><subject>Silicon-on-insulator</subject><subject>Simulation</subject><subject>Thermal variables control</subject><subject>Voltage measurement</subject><issn>1938-1891</issn><isbn>9781665479509</isbn><isbn>1665479507</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2022</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUNtKAzEUjIJgrf0CQc4PbE2yt-SxF6uFQostvpZs9uwaSZOSTR_2d_xSW-3TDAMzzAwhz4yOGaPyZfmx2WaC83LMKedjWRZZnmU3ZCRLwYoiz0qZU3lLBkymImFCsnvy0HXflHKaimJAfiYOJq1xLcyxDapW0XgH29PxGLDr_rj-wgOCijDzrovKRdhgaHw4KKcRqv6ix-CtvaRcnLaHT2-jas8uV8PU1z1MjerAOFBQ5OAOsDhZ2ydzPFqMWMPWWKO9S9YuWbruZFX0ATbB63OJR3LXKNvh6IpDslu87mbvyWr9tpxNVok5b4mJqriqK6HrLC8Qta6aTBU5FRWVjU4VV5oWJdI8FbWmlWRpg0irhpc8E41g6ZA8_ccaRNwfgzmo0O-vj6a_vPluew</recordid><startdate>202203</startdate><enddate>202203</enddate><creator>Suda, Ikuo</creator><creator>Kishida, Ryo</creator><creator>Kobayashi, Kazutoshi</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>202203</creationdate><title>An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process</title><author>Suda, Ikuo ; Kishida, Ryo ; Kobayashi, Kazutoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-ab2adb8cd456eeccbf4a6508b09fc3a2ac067e0538dc0b913fee0bf27248f813</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2022</creationdate><topic>bias temperature instability (BTI)</topic><topic>Degradation</topic><topic>forward body bias (FBB)</topic><topic>Negative bias temperature instability</topic><topic>Power measurement</topic><topic>ring oscillator (RO)</topic><topic>Silicon-on-insulator</topic><topic>Simulation</topic><topic>Thermal variables control</topic><topic>Voltage measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Suda, Ikuo</creatorcontrib><creatorcontrib>Kishida, Ryo</creatorcontrib><creatorcontrib>Kobayashi, Kazutoshi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Suda, Ikuo</au><au>Kishida, Ryo</au><au>Kobayashi, Kazutoshi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process</atitle><btitle>2022 IEEE International Reliability Physics Symposium (IRPS)</btitle><stitle>IRPS48227</stitle><date>2022-03</date><risdate>2022</risdate><spage>P4-1</spage><epage>P4-5</epage><pages>P4-1-P4-5</pages><eissn>1938-1891</eissn><eisbn>9781665479509</eisbn><eisbn>1665479507</eisbn><abstract>We propose an aging degradation suppression scheme at constant performance by controlling supply voltage and body bias for an FDSOI device. Reducing supply voltage while increasing body bias can maintain performance and suppress dynamic power and aging degradation caused by BTI. From measurement results of ring oscillators in a 65 nm FDSOI, PBTI- and NBTI-induced degradations can be reduced by 71% and 66% at 1.5 V supply voltage and 0.20 V forward body bias paying the penalty of 3.03x static power increase. From simulation results by a 16-bit ALU, the figure of merit defined by the product of the time exponent n from NBTI, static and dynamic power consumption becomes almost constant at any body bias.</abstract><pub>IEEE</pub><doi>10.1109/IRPS48227.2022.9764544</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | EISSN: 1938-1891 |
| ispartof | 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P4-1-P4-5 |
| issn | 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_9764544 |
| source | IEEE Xplore All Conference Series |
| subjects | bias temperature instability (BTI) Degradation forward body bias (FBB) Negative bias temperature instability Power measurement ring oscillator (RO) Silicon-on-insulator Simulation Thermal variables control Voltage measurement |
| title | An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process |
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